to ? 220f 1. base 2. collector 3. emitter to-220f plastic-encapsulate transistors KTD2061 transistor (npn) features z high breakdown voltage z high transition frequency z high current z complementary to ktb1369 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 200 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 180 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 5 v collector cut-off current i cbo v cb =200v,i e =0 1 a emitter cut-off current i ebo v eb =5v,i c =0 1 a dc current gain h fe v ce =10v, i c =400ma 70 240 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =50ma 1 v base-emitter voltage v be v ce =5v, i c =500ma 1 v transition frequency f t v ce =10v,i c =400ma 100 mhz classification of h fe rank o y range 70-140 120-240 symbol parameter value unit v cbo collector-base voltage 200 v v ceo collector-emitter voltage 180 v v ebo emitter-base voltage 5 v i c collector current 2 a p c collector power dissipation 2 w r ja thermal resistance from junction to ambient 62.5 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
